The revolution in SiGe: Impact on device electronics

D. L. Harame; S. J. Koester; G. Freeman; P. Cottrel; K. Rim; G. Dehlinger; D. Ahlgren; J. S. Dunn; D. Greenberg; A. Joseph; F. Anderson; J. S. Rieh; S. A.S.T. Onge; D. Coolbaugh; V. Ramachandran; J. D. Cressler; S. Subbanna

doi:10.1016/j.apsusc.2003.08.086

The revolution in SiGe: Impact on device electronics

D. L. Harame, S. J. Koester, G. Freeman, P. Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, J. S. Dunn, D. Greenberg, A. Joseph, F. Anderson, J. S. Rieh, S. A.S.T. Onge, D. Coolbaugh, V. Ramachandran, J. D. Cressler, S. Subbanna

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

Original language	English (US)
Pages (from-to)	9-17
Number of pages	9
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.086
State	Published - Mar 15 2004

Keywords

Device scaling
SiGe
SiGe BiCMOS
SiGe HBT

Access

10.1016/j.apsusc.2003.08.086

OpenUrl availability

Full text

Cite this

Harame, D. L., Koester, S. J., Freeman, G., Cottrel, P., Rim, K., Dehlinger, G., Ahlgren, D., Dunn, J. S., Greenberg, D., Joseph, A., Anderson, F., Rieh, J. S., Onge, S. A. S. T., Coolbaugh, D., Ramachandran, V., Cressler, J. D., & Subbanna, S. (2004). The revolution in SiGe: Impact on device electronics. Applied Surface Science, 224(1-4), 9-17. https://doi.org/10.1016/j.apsusc.2003.08.086

Harame, DL, Koester, SJ, Freeman, G, Cottrel, P, Rim, K, Dehlinger, G, Ahlgren, D, Dunn, JS, Greenberg, D, Joseph, A, Anderson, F, Rieh, JS, Onge, SAST, Coolbaugh, D, Ramachandran, V, Cressler, JD & Subbanna, S 2004, 'The revolution in SiGe: Impact on device electronics', Applied Surface Science, vol. 224, no. 1-4, pp. 9-17. https://doi.org/10.1016/j.apsusc.2003.08.086

@article{092a042829e643ed8c7fa796a43ce05b,

title = "The revolution in SiGe: Impact on device electronics",

abstract = "SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.",

keywords = "Device scaling, SiGe, SiGe BiCMOS, SiGe HBT",

author = "Harame, {D. L.} and Koester, {S. J.} and G. Freeman and P. Cottrel and K. Rim and G. Dehlinger and D. Ahlgren and Dunn, {J. S.} and D. Greenberg and A. Joseph and F. Anderson and Rieh, {J. S.} and Onge, {S. A.S.T.} and D. Coolbaugh and V. Ramachandran and Cressler, {J. D.} and S. Subbanna",

year = "2004",

month = mar,

day = "15",

doi = "10.1016/j.apsusc.2003.08.086",

language = "English (US)",

volume = "224",

pages = "9--17",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - The revolution in SiGe

T2 - Impact on device electronics

AU - Harame, D. L.

AU - Koester, S. J.

AU - Freeman, G.

AU - Cottrel, P.

AU - Rim, K.

AU - Dehlinger, G.

AU - Ahlgren, D.

AU - Dunn, J. S.

AU - Greenberg, D.

AU - Joseph, A.

AU - Anderson, F.

AU - Rieh, J. S.

AU - Onge, S. A.S.T.

AU - Coolbaugh, D.

AU - Ramachandran, V.

AU - Cressler, J. D.

AU - Subbanna, S.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

AB - SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

KW - Device scaling

KW - SiGe

KW - SiGe BiCMOS

KW - SiGe HBT

UR - http://www.scopus.com/inward/record.url?scp=10744224579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10744224579&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2003.08.086

DO - 10.1016/j.apsusc.2003.08.086

M3 - Article

AN - SCOPUS:10744224579

SN - 0169-4332

VL - 224

SP - 9

EP - 17

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

The revolution in SiGe: Impact on device electronics

Abstract

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this