The revolution in SiGe: Impact on device electronics

D. L. Harame, S. J. Koester, G. Freeman, P. Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, J. S. Dunn, D. Greenberg, A. Joseph, F. Anderson, J. S. Rieh, S. A.S.T. Onge, D. Coolbaugh, V. Ramachandran, J. D. Cressler, S. Subbanna

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

Original languageEnglish (US)
Pages (from-to)9-17
Number of pages9
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
StatePublished - Mar 15 2004

Keywords

  • Device scaling
  • SiGe
  • SiGe BiCMOS
  • SiGe HBT

Fingerprint Dive into the research topics of 'The revolution in SiGe: Impact on device electronics'. Together they form a unique fingerprint.

Cite this