The role of dangling bonds in the transport and recombination of a-Si: Ge: H alloys

R. A. Street, C. C. Tsai, M. Stutzmann, J. Kakalios

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Abstract

Measurements are reported of the luminescence, time-of-flight photoconductivity and electron spin resonance (ESR) in a-Si: Ge: H alloys. In the alloys it is found that the luminescence intensity varies with defect density according to a tunnelling model similar to that in a-Si:H. However, the tunnelling distance decreases with Ge concentration up to about 30% and then increases. This nonmonotonic behaviour is attributed to the additional chemical disorder of the alloys. Time-of-flight experiments confirm that the dangling bonds are the dominant deep trap in the alloys. We find that the capture cross-sections for electrons and holes are very similar to those measured in a-Si: H, and are independent of whether the trap is a Ge or Si dangling bond.

Original languageEnglish (US)
Pages (from-to)289-303
Number of pages15
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume56
Issue number3
DOIs
StatePublished - Sep 1987

Bibliographical note

Funding Information:
We are grateful to R. Thompson and J. Zesch for technical assistance. The research is supported by the Solar Energy Research Institute.

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