Theory of nonradiative recombination in amorphous semiconductors

S. D. Baranovskii, V. G. Karpov, B. I. Shklovskii

Research output: Contribution to journalArticlepeer-review

Abstract

Theory is developed for nonradiative recombination in a system with a continuous spectrum of localized states in the mobility gap, e.g. in non-crystalline semiconductor. The recombination flux is calculated and its dependeces on carrier concentration, temperature and other parameters are studied.

Original languageEnglish (US)
Pages (from-to)487-490
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume97-98
Issue numberPART 1
DOIs
StatePublished - Dec 2 1987

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