Abstract
The pseudo-steady-state heat transfer model developed in a previous paper (J. Crystal Growth 74 (1986) 605) is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 227-240 |
| Number of pages | 14 |
| Journal | Journal of Crystal Growth |
| Volume | 75 |
| Issue number | 2 |
| DOIs | |
| State | Published - May 2 1986 |
Bibliographical note
Funding Information:The authors are grateful to the Microgravity Sciences Program of the US National Aeronautics and Space, to the National Science Foundation (through a Graduate Fellowship to J.J.D.), and to the Camille and Henry Dreyfus Foundation for a Teacher—Scholar Grant to R.A.B. for partial support of this research. We are also indebted to M. Gevelber for value discusions about process control and CZ modelling.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.