THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

J. Kakalios, R. A. Street

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.

Original languageEnglish (US)
Title of host publicationDisord Semicond
PublisherPlenum Press
ISBN (Print)0306424940, 9780306424946
DOIs
StatePublished - 1987
Externally publishedYes

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