THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

J. Kakalios; R. A. Street

doi:10.1007/978-1-4613-1841-5_57

THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

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Abstract

The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.

Original language	English (US)
Title of host publication	Disord Semicond
Publisher	Plenum Press
ISBN (Print)	0306424940, 9780306424946
DOIs	https://doi.org/10.1007/978-1-4613-1841-5_57
State	Published - 1987
Externally published	Yes

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title = "THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.",

abstract = "The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.",

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THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

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