Thermal plasma CVD of diamond: relation between flow velocity and film growth chemistry

Steven L Girshick, B. W. Yu

Research output: Contribution to journalConference articlepeer-review

Abstract

It was suggested that under thermal conditions, carbon atoms may also act as growth monomers, given that the cold boundary layer above the growing film is adequately thin to permit transport of C atoms from the hot plasma to the film surface. The mechanisms proposed by Harris were extended for growth on (100) surface by methyl radicals to investigate the potential role of C atoms in diamond growth. A model was developed with a configuration that corresponded to a diamond CVD reactor. Calculations were made with terms corresponding to experimental inputs of hydrogen, methane and argon. The computation were then extended by a numerical experiment in which the fluid boundary layer thickness was lessened by increasing the velocity of the impinging plasma jet. The calculations predicted an increase in linear growth rate as the jet velocity is augmented.

Original languageEnglish (US)
Number of pages1
JournalIEEE International Conference on Plasma Science
StatePublished - Dec 1 1994
EventProceedings of the IEEE International Conference on Plasma Science - Santa Fe, NM, USA
Duration: Jun 6 1994Jun 8 1994

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