Abstract
The thermal stability of strained Si on relaxed Si1-xGex structures annealed at 1000 °C was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiffusion at the Si/Si1-xGex interface is negligible for annealing times <30 sec and is independent of the initial Si layer thickness and the composition of the Si1-xGex layer. In all cases the Si layers remained nearly fully strained, but a significant density of misfit dislocations was seen in layers that exceeded the critical thickness for dislocation glide. The Si layer thickness could be measured for layers as thin as 7 nm.
Original language | English (US) |
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Pages (from-to) | 3-8 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 686 |
State | Published - 2002 |
Event | Materials Issues in Novel Si-Based Technology - Boston, MA, United States Duration: Nov 26 2001 → Nov 28 2001 |