A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (τ) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide τ, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator.
Bibliographical noteFunding Information:
This work was supported by the National Key Research and Development Program of China (MOST, Grant No. 2017YFA0206200) and the National Natural Science Foundation of China (NSFC, Grant Nos. 11434014, 51620105004, and 11674373) and partially supported by the Strategic Priority Research Program (B) (Grant No. XDB07030200), the International Partnership Program (Grant No. 112111KYSB20170090), and the Key Research Program of Frontier Sciences (Grant No. QYZDJ-SSWSLH016) of the Chinese Academy of Sciences (CAS). This work was also supported by the University of Minnesota Supercomputing Institute for computer time.