Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel junctions

Jianying Qin; Xiao Wang; Tao Qu; Caihua Wan; Li Huang; Chenyang Guo; Tian Yu; Hongxiang Wei; Xiufeng Han

doi:10.1063/1.5077025

Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel junctions

Jianying Qin, Xiao Wang, Tao Qu, Caihua Wan, Li Huang, Chenyang Guo, Tian Yu, Hongxiang Wei, Xiufeng Han

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (τ) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide τ, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator.

Original language	English (US)
Article number	112401
Journal	Applied Physics Letters
Volume	114
Issue number	11
DOIs	https://doi.org/10.1063/1.5077025
State	Published - Mar 18 2019

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title = "Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel junctions",

abstract = "A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (τ) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide τ, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator.",

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AU - Qin, Jianying

AU - Wang, Xiao

AU - Qu, Tao

AU - Wan, Caihua

AU - Huang, Li

AU - Guo, Chenyang

AU - Yu, Tian

AU - Wei, Hongxiang

AU - Han, Xiufeng

PY - 2019/3/18

Y1 - 2019/3/18

N2 - A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (τ) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide τ, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator.

AB - A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (τ) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide τ, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator.

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Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel junctions

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