TY - JOUR
T1 - Thin film transistors on polyimide substrates
AU - Kavak, Hamide
AU - Gruber, Carl
AU - Shanks, Howard
AU - Landin, Allen
AU - Constant, Alan
AU - Burns, Stanley
PY - 2000/5/1
Y1 - 2000/5/1
N2 - The properties of individual inverted gate, thin film transistors (TFT) with a range of channel width to length from 2/2 to 4780/4 fabricated on 5 μm thick polyimide substrates have been investigated. In addition to the room temperature properties, the effects of illumination, bias stress and temperature have been measured. The current as a function of voltage of the TFTs scale linearly with transistor size and the threshold voltages are independent of size. Illumination of the transistors increases the off current and decreases the threshold voltage. Gate characteristics were determined for transistors before and after a bias stress of VGS = 20 V for t = 10, 102, 103 and 104 s. The threshold voltage shifted to larger voltages and the on/off ratio decreased with application time. Gate and transfer characteristics of the TFTs were measured every 25°C from 25°C to 125°C. The threshold voltages decreased with increasing temperature while field effect mobilities increased.
AB - The properties of individual inverted gate, thin film transistors (TFT) with a range of channel width to length from 2/2 to 4780/4 fabricated on 5 μm thick polyimide substrates have been investigated. In addition to the room temperature properties, the effects of illumination, bias stress and temperature have been measured. The current as a function of voltage of the TFTs scale linearly with transistor size and the threshold voltages are independent of size. Illumination of the transistors increases the off current and decreases the threshold voltage. Gate characteristics were determined for transistors before and after a bias stress of VGS = 20 V for t = 10, 102, 103 and 104 s. The threshold voltage shifted to larger voltages and the on/off ratio decreased with application time. Gate and transfer characteristics of the TFTs were measured every 25°C from 25°C to 125°C. The threshold voltages decreased with increasing temperature while field effect mobilities increased.
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U2 - 10.1016/s0022-3093(99)00945-x
DO - 10.1016/s0022-3093(99)00945-x
M3 - Conference article
AN - SCOPUS:0346482201
SN - 0022-3093
VL - 266-269 B
SP - 1325
EP - 1328
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)
Y2 - 23 August 1999 through 27 August 1999
ER -