Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Roberto Grassi; Stefano Poli; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani

doi:10.1016/j.sse.2008.07.015

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.

Original language	English (US)
Pages (from-to)	462-467
Number of pages	6
Journal	Solid-State Electronics
Volume	53
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2008.07.015
State	Published - Apr 2009

Bibliographical note

Funding Information:
The authors are grateful to Dr. Giorgio Cinacchi for providing DFT data. This work has been supported by the EU FP7 IST Project GRAND (Contract No. 215752) via the IU.NET Consortium.

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

Keywords

GNR-FET
Graphene nanoelectronics
Non-equilibrium green functions
Quantum transport
Tight-binding

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AU - Reggiani, Susanna

AU - Baccarani, Giorgio

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Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Abstract

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Keywords

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