We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.
Bibliographical noteFunding Information:
The authors are grateful to Dr. Giorgio Cinacchi for providing DFT data. This work has been supported by the EU FP7 IST Project GRAND (Contract No. 215752) via the IU.NET Consortium.
- Graphene nanoelectronics
- Non-equilibrium green functions
- Quantum transport