Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN

G. Cywinski, P. Sai, I. Yahniuk, P. Kruszewski, B. Grzywacz, J. Przybytek, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, W. Knap, P. Wisniewski, B. Stonio, G. S. Simin, S. L. Rumyantsev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.

Original languageEnglish (US)
Title of host publicationMIKON 2018 - 22nd International Microwave and Radar Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages715-718
Number of pages4
ISBN (Electronic)9788394942113
DOIs
StatePublished - Jul 5 2018
Externally publishedYes
Event22nd International Microwave and Radar Conference, MIKON 2018 - Poznan, Poland
Duration: May 14 2018May 17 2018

Publication series

NameMIKON 2018 - 22nd International Microwave and Radar Conference

Other

Other22nd International Microwave and Radar Conference, MIKON 2018
CountryPoland
CityPoznan
Period5/14/185/17/18

Bibliographical note

Funding Information:
This work was partially supported by the National Science Centre, Poland allocated on the basis of Grant No. 2016/22/E/ST7/00526, by the ERANET RUS PLUS – TERASENS project, and by the Foundation for Polish Science through Grants No. TEAM/2016-3/25 and No. TEAM/2016-3/26.

Keywords

  • GaN/AlGaN 2DEG
  • HEMT
  • THz resonant detector

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