We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.
|Original language||English (US)|
|Title of host publication||MIKON 2018 - 22nd International Microwave and Radar Conference|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|State||Published - Jul 5 2018|
|Event||22nd International Microwave and Radar Conference, MIKON 2018 - Poznan, Poland|
Duration: May 14 2018 → May 17 2018
|Name||MIKON 2018 - 22nd International Microwave and Radar Conference|
|Other||22nd International Microwave and Radar Conference, MIKON 2018|
|Period||5/14/18 → 5/17/18|
Bibliographical noteFunding Information:
This work was partially supported by the National Science Centre, Poland allocated on the basis of Grant No. 2016/22/E/ST7/00526, by the ERANET RUS PLUS – TERASENS project, and by the Foundation for Polish Science through Grants No. TEAM/2016-3/25 and No. TEAM/2016-3/26.
- GaN/AlGaN 2DEG
- THz resonant detector