Abstract
Rutile single crystals treated with ion-beam preferential etching (IBPE) are investigated with electrical transport and transmission electron microscopy. The initially insulating single crystals show the formation of an oxygen vacancy-rich, highly ordered, thin conducting layer, below a crystalline rutile TiO2 surface layer. Carrier concentrations of 1019 cm -3 and very high mobilities of the order of 300 cm2 V-1 s-1 are observed in the nanolayers. The observations indicate that rutile single crystals can be effectively transformed into controlled conducting material using IBPE for creating a new breakthrough in transparent conducting media.
Original language | English (US) |
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Article number | 415303 |
Journal | Nanotechnology |
Volume | 21 |
Issue number | 41 |
DOIs | |
State | Published - Oct 15 2010 |