The effects of hot carriers on CMOS device characteristics and circuit performance have been investigated at 77 K under pulsed-stress conditions. A CMOS inverter was subjected to a pulsed input at 77 K and the resulting substrate current generation and device degradation have been characterized. The result shows that hot-carrier effects at 77 K can be significant for CMOS devices having conventional source/drain structure under pulsed stress. The effects on CMOS circuit performance are also reported.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Jan 1 1985|