Transistors built with ZrO2 and HfO2 deposited from nitratos

Stephen A. Campbell; Noel Hoilien; Tiezhong Ma; Fang Chen; Ryan Smith; Wayne Gladfelter

Transistors built with ZrO₂ and HfO₂ deposited from nitratos

Stephen A. Campbell, Noel Hoilien, Tiezhong Ma, Fang Chen, Ryan Smith, Wayne Gladfelter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO₂ and HfO₂ deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO₂, which is thermodynamically unstable on silicon, ZrO₂ and HfO₂ form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO₂ / SiO_xN_y / Si stack is comparable to that of a conventional SiO_xN_y/Si interface.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	S A Campbell, L A Clevenger, P B Griffin, C C Hobbs
Volume	670
State	Published - 2001
Event	Gate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States Duration: Apr 17 2001 → Apr 19 2001

Other

Other	Gate Stack and Silicide Issues in Silicon Processing II
Country/Territory	United States
City	San Francisco, CA
Period	4/17/01 → 4/19/01

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title = "Transistors built with ZrO2 and HfO2 deposited from nitratos",

abstract = "The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamically unstable on silicon, ZrO2 and HfO2 form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO2 / SiOxNy / Si stack is comparable to that of a conventional SiOxNy/Si interface.",

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editor = "Campbell, {S A} and Clevenger, {L A} and Griffin, {P B} and Hobbs, {C C}",

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T1 - Transistors built with ZrO2 and HfO2 deposited from nitratos

AU - Campbell, Stephen A.

AU - Hoilien, Noel

AU - Ma, Tiezhong

AU - Chen, Fang

AU - Smith, Ryan

AU - Gladfelter, Wayne

PY - 2001

Y1 - 2001

N2 - The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamically unstable on silicon, ZrO2 and HfO2 form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO2 / SiOxNy / Si stack is comparable to that of a conventional SiOxNy/Si interface.

AB - The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamically unstable on silicon, ZrO2 and HfO2 form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO2 / SiOxNy / Si stack is comparable to that of a conventional SiOxNy/Si interface.

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M3 - Conference contribution

AN - SCOPUS:0035556688

VL - 670

BT - Materials Research Society Symposium - Proceedings

A2 - Campbell, S A

A2 - Clevenger, L A

A2 - Griffin, P B

A2 - Hobbs, C C

T2 - Gate Stack and Silicide Issues in Silicon Processing II

Y2 - 17 April 2001 through 19 April 2001

ER -

Transistors built with ZrO₂ and HfO₂ deposited from nitratos

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