Transistors built with ZrO2 and HfO2 deposited from nitratos

Stephen A. Campbell, Noel Hoilien, Tiezhong Ma, Fang Chen, Ryan Smith, Wayne Gladfelter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamically unstable on silicon, ZrO2 and HfO2 form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO2 / SiOxNy / Si stack is comparable to that of a conventional SiOxNy/Si interface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS A Campbell, L A Clevenger, P B Griffin, C C Hobbs
StatePublished - 2001
EventGate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States
Duration: Apr 17 2001Apr 19 2001


OtherGate Stack and Silicide Issues in Silicon Processing II
CountryUnited States
CitySan Francisco, CA

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