Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors

Jaewon Jang, Rungrot Kitsomboonloha, Sarah L. Swisher, Eung Seok Park, Hongki Kang, Vivek Subramanian

Research output: Contribution to journalArticlepeer-review

111 Scopus citations


This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.

Original languageEnglish (US)
Pages (from-to)1042-1047
Number of pages6
JournalAdvanced Materials
Issue number7
StatePublished - Feb 20 2013


  • metal oxides
  • sol-gel process
  • solution process
  • thin film transistors
  • transparent


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