Transport properties of organic field effect transistors modified by quantum dots

Masaya Nishioka; Yu Chen; A. M. Goldman

doi:10.1063/1.2912345

Transport properties of organic field effect transistors modified by quantum dots

Masaya Nishioka, Yu Chen, A. M. Goldman

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated the transport properties of organic field effect transistors (OFETs) with quantum dot layers between the organic semiconductor and the dielectric. An insulating dot layer changes the properties of OFETs, suggesting that OFET mobility will always be reduced by additional physical disorder. However, a metal dot layer causes a much larger reduction of the mobility and an increase of the activation energy. This phenomenon may be explained by more charge being induced on metal dots causing the carriers to be more localized.

Original language	English (US)
Article number	153308
Journal	Applied Physics Letters
Volume	92
Issue number	15
DOIs	https://doi.org/10.1063/1.2912345
State	Published - 2008

Bibliographical note

Funding Information:
The authors are grateful to C. Daniel Frisbie and Yu Xia for useful advice and for sample preparation. This work was supported in part by the U.S. Department of Energy under Grant No. DE-FG02-02ER46004 and by the National Science Foundation through the University of Minnesota Materials Research Science and Engineering Center under Grant No. NSF/DMR-0212032.

Access

10.1063/1.2912345

OpenUrl availability

Full text

Cite this

@article{c943dfe6fafd4447a0c49ea6a62cb7c4,

title = "Transport properties of organic field effect transistors modified by quantum dots",

abstract = "We have investigated the transport properties of organic field effect transistors (OFETs) with quantum dot layers between the organic semiconductor and the dielectric. An insulating dot layer changes the properties of OFETs, suggesting that OFET mobility will always be reduced by additional physical disorder. However, a metal dot layer causes a much larger reduction of the mobility and an increase of the activation energy. This phenomenon may be explained by more charge being induced on metal dots causing the carriers to be more localized.",

author = "Masaya Nishioka and Yu Chen and Goldman, {A. M.}",

note = "Funding Information: The authors are grateful to C. Daniel Frisbie and Yu Xia for useful advice and for sample preparation. This work was supported in part by the U.S. Department of Energy under Grant No. DE-FG02-02ER46004 and by the National Science Foundation through the University of Minnesota Materials Research Science and Engineering Center under Grant No. NSF/DMR-0212032.",

year = "2008",

doi = "10.1063/1.2912345",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Transport properties of organic field effect transistors modified by quantum dots

AU - Nishioka, Masaya

AU - Chen, Yu

AU - Goldman, A. M.

N1 - Funding Information: The authors are grateful to C. Daniel Frisbie and Yu Xia for useful advice and for sample preparation. This work was supported in part by the U.S. Department of Energy under Grant No. DE-FG02-02ER46004 and by the National Science Foundation through the University of Minnesota Materials Research Science and Engineering Center under Grant No. NSF/DMR-0212032.

PY - 2008

Y1 - 2008

N2 - We have investigated the transport properties of organic field effect transistors (OFETs) with quantum dot layers between the organic semiconductor and the dielectric. An insulating dot layer changes the properties of OFETs, suggesting that OFET mobility will always be reduced by additional physical disorder. However, a metal dot layer causes a much larger reduction of the mobility and an increase of the activation energy. This phenomenon may be explained by more charge being induced on metal dots causing the carriers to be more localized.

AB - We have investigated the transport properties of organic field effect transistors (OFETs) with quantum dot layers between the organic semiconductor and the dielectric. An insulating dot layer changes the properties of OFETs, suggesting that OFET mobility will always be reduced by additional physical disorder. However, a metal dot layer causes a much larger reduction of the mobility and an increase of the activation energy. This phenomenon may be explained by more charge being induced on metal dots causing the carriers to be more localized.

UR - http://www.scopus.com/inward/record.url?scp=42349087177&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42349087177&partnerID=8YFLogxK

U2 - 10.1063/1.2912345

DO - 10.1063/1.2912345

M3 - Article

AN - SCOPUS:42349087177

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153308

ER -

Transport properties of organic field effect transistors modified by quantum dots

Abstract

Bibliographical note

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this