Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric

Christopher R. Newman; Reid J. Chesterfield; Jeffrey A. Merlo; C. Daniel Frisbie

doi:10.1063/1.1771466

Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric

Christopher R. Newman, Reid J. Chesterfield, Jeffrey A. Merlo, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Single crystal organic field effect transistors (FET) fabricated by adhering thin crystals of tetracene to silica substrates were investigated. The intrinsic transport properties of tetracene single crystals were measured. It was found that these FETs exhibit mobilities as high as 0.1 cm ²V ^-1s ^-1 and I _on/I _off ratios in excess of 10 ⁹. It was also found that the larger devices show thermally activated mobilities.

Original language	English (US)
Pages (from-to)	422-424
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.1771466
State	Published - Jul 19 2004

Bibliographical note

Funding Information:
One of the authors (C. R. N.) thanks the A.S.E.E. for financial support provided through an N.D.S.E.G. Fellowship. This work was also partially supported by the NSF Materials Research Science and Engineering Center Program (Grant No. DMR-0212302).

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title = "Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric",

abstract = "Single crystal organic field effect transistors (FET) fabricated by adhering thin crystals of tetracene to silica substrates were investigated. The intrinsic transport properties of tetracene single crystals were measured. It was found that these FETs exhibit mobilities as high as 0.1 cm 2V -1s -1 and I on/I off ratios in excess of 10 9. It was also found that the larger devices show thermally activated mobilities.",

author = "Newman, {Christopher R.} and Chesterfield, {Reid J.} and Merlo, {Jeffrey A.} and Frisbie, {C. Daniel}",

note = "Funding Information: One of the authors (C. R. N.) thanks the A.S.E.E. for financial support provided through an N.D.S.E.G. Fellowship. This work was also partially supported by the NSF Materials Research Science and Engineering Center Program (Grant No. DMR-0212302).",

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AU - Chesterfield, Reid J.

AU - Merlo, Jeffrey A.

AU - Frisbie, C. Daniel

N1 - Funding Information: One of the authors (C. R. N.) thanks the A.S.E.E. for financial support provided through an N.D.S.E.G. Fellowship. This work was also partially supported by the NSF Materials Research Science and Engineering Center Program (Grant No. DMR-0212302).

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Y1 - 2004/7/19

N2 - Single crystal organic field effect transistors (FET) fabricated by adhering thin crystals of tetracene to silica substrates were investigated. The intrinsic transport properties of tetracene single crystals were measured. It was found that these FETs exhibit mobilities as high as 0.1 cm 2V -1s -1 and I on/I off ratios in excess of 10 9. It was also found that the larger devices show thermally activated mobilities.

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Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric

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