Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric

Christopher R. Newman, Reid J. Chesterfield, Jeffrey A. Merlo, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

67 Scopus citations

Abstract

Single crystal organic field effect transistors (FET) fabricated by adhering thin crystals of tetracene to silica substrates were investigated. The intrinsic transport properties of tetracene single crystals were measured. It was found that these FETs exhibit mobilities as high as 0.1 cm 2V -1s -1 and I on/I off ratios in excess of 10 9. It was also found that the larger devices show thermally activated mobilities.

Original languageEnglish (US)
Pages (from-to)422-424
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number3
DOIs
StatePublished - Jul 19 2004

Bibliographical note

Funding Information:
One of the authors (C. R. N.) thanks the A.S.E.E. for financial support provided through an N.D.S.E.G. Fellowship. This work was also partially supported by the NSF Materials Research Science and Engineering Center Program (Grant No. DMR-0212302).

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

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