Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires

Si In Kim; Hana Yoon; Kwanyong Seo; Youngdong Yoo; Sungyul Lee; Bongsoo Kim

doi:10.1021/nn302141w

Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires

Si In Kim, Hana Yoon, Kwanyong Seo, Youngdong Yoo, Sungyul Lee, Bongsoo Kim

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al ₂O ₃ substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.

Original language	English (US)
Pages (from-to)	8652-8657
Number of pages	6
Journal	ACS nano
Volume	6
Issue number	10
DOIs	https://doi.org/10.1021/nn302141w
State	Published - Oct 23 2012

Keywords

epitaxial growth
iron silicide
nanowires
seed crystal
transition metal silicides

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@article{14d404eb0ddd4399aba3b1303e57bd05,

title = "Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires",

abstract = "We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al 2O 3 substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.",

keywords = "epitaxial growth, iron silicide, nanowires, seed crystal, transition metal silicides",

author = "Kim, {Si In} and Hana Yoon and Kwanyong Seo and Youngdong Yoo and Sungyul Lee and Bongsoo Kim",

year = "2012",

month = oct,

day = "23",

doi = "10.1021/nn302141w",

language = "English (US)",

volume = "6",

pages = "8652--8657",

journal = "ACS nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires

AU - Kim, Si In

AU - Yoon, Hana

AU - Seo, Kwanyong

AU - Yoo, Youngdong

AU - Lee, Sungyul

AU - Kim, Bongsoo

PY - 2012/10/23

Y1 - 2012/10/23

N2 - We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al 2O 3 substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.

AB - We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al 2O 3 substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth is initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.

KW - epitaxial growth

KW - iron silicide

KW - nanowires

KW - seed crystal

KW - transition metal silicides

UR - http://www.scopus.com/inward/record.url?scp=84867826034&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867826034&partnerID=8YFLogxK

U2 - 10.1021/nn302141w

DO - 10.1021/nn302141w

M3 - Article

C2 - 22966939

AN - SCOPUS:84867826034

SN - 1936-0851

VL - 6

SP - 8652

EP - 8657

JO - ACS nano

JF - ACS nano

IS - 10

ER -

Truncated tetrahedron seed crystals initiating stereoaligned growth of FeSi nanowires

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