Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

D. L. Li, J. F. Feng, G. Q. Yu, P. Guo, J. Y. Chen, H. X. Wei, X. F. Han, J. M.D. Coey

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Abstract

Dynamic conductance dI/dV and inelastic electron tunneling spectroscopy (IETS) d2I/dV2 have been measured at different temperatures for double barrier magnetic tunnel junctions with a thin top MgO layer. The resistance in the antiparallel state exhibits a normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of pinholes in the thin top MgO layer. Three IETS peaks are the zero-bias anomaly, interface magnons, and barrier phonons in both the parallel and antiparallel states. The zero-bias anomaly is the strongest peak in the parallel state and its intensity decreases with temperature. The magnon has the largest intensity in the antiparallel state and its intensity also decreases with temperature. The origins of the dips and peaks in the dI/dV-V curve are also discussed.

Original languageEnglish (US)
Article number213909
JournalJournal of Applied Physics
Volume114
Issue number21
DOIs
StatePublished - Dec 7 2013

Bibliographical note

Funding Information:
The work was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, No. 2010CB934400] and National Natural Science Foundation [NSFC, Grant Nos. 51021061, 10934009, 11174341, and 11222432].

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