TY - JOUR
T1 - Two- and one-dimensional honeycomb structures of silicon and germanium
AU - Cahangirov, S.
AU - Topsakal, M.
AU - Aktürk, E.
AU - Šahin, H.
AU - Ciraci, S.
PY - 2009/6/12
Y1 - 2009/6/12
N2 - First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their π and π* bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.
AB - First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their π and π* bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.
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U2 - 10.1103/PhysRevLett.102.236804
DO - 10.1103/PhysRevLett.102.236804
M3 - Article
C2 - 19658958
AN - SCOPUS:67249122406
SN - 0031-9007
VL - 102
JO - Physical review letters
JF - Physical review letters
IS - 23
M1 - 236804
ER -