UHV-MOCVD growth and in situ characterization of epitaxial TiO2 films

Samuel Chen; H. J. Gysling; G. R. Paz-Pujalt; T. N. Blanton; T. Castro; K. M. Chen; C. Fictorie; W. L. Gladfelter; A. Franciosi; P. I. Cohen; J. F. Evans

UHV-MOCVD growth and in situ characterization of epitaxial TiO₂ films

Samuel Chen, H. J. Gysling, G. R. Paz-Pujalt, T. N. Blanton, T. Castro, K. M. Chen, C. Fictorie, W. L. Gladfelter, A. Franciosi, P. I. Cohen, J. F. Evans

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin films of TiO₂ were grown on SrTiO₃ and Al₂O₃ using Ti(OC₃H₇)₄ in the absence of any external oxygen source such as H₂O or O₂. On SrTiO₃ (001), epitaxial anatase (001) formed even at temperatures (800°C) above the anatase to rutile phase transition temperature. In situ reflection high energy electron diffraction (RHEED) was used to monitor structural evolution during growth, and the films were further characterized by Auger electron spectroscopy (AES), transmission electron microscopy (TEM),and x-ray diffraction. Reaction kinetics were monitored using mass spectrometry, and these results, combined with temperature-programmed reaction spectroscopy, gave some insight into the deposition process.

Original language	English (US)
Title of host publication	Evolution of Surface and Thin Film Microstructure
Editors	Harry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Publisher	Publ by Materials Research Society
Pages	173-178
Number of pages	6
ISBN (Print)	1558991751
State	Published - 1993
Event	Proceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: Nov 30 1992 → Dec 4 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	280
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1992 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	11/30/92 → 12/4/92

OpenUrl availability

Full text

Cite this

Chen, S., Gysling, H. J., Paz-Pujalt, G. R., Blanton, T. N., Castro, T., Chen, K. M., Fictorie, C., Gladfelter, W. L., Franciosi, A., Cohen, P. I., & Evans, J. F. (1993). UHV-MOCVD growth and in situ characterization of epitaxial TiO₂ films. In H. A. Atwater, E. Chason, M. H. Grabow, & M. G. Lagally (Eds.), Evolution of Surface and Thin Film Microstructure (pp. 173-178). (Materials Research Society Symposium Proceedings; Vol. 280). Publ by Materials Research Society.

UHV-MOCVD growth and in situ characterization of epitaxial TiO₂ films. / Chen, Samuel; Gysling, H. J.; Paz-Pujalt, G. R. et al.
Evolution of Surface and Thin Film Microstructure. ed. / Harry A. Atwater; Eric Chason; Marcia H. Grabow; Max G. Lagally. Publ by Materials Research Society, 1993. p. 173-178 (Materials Research Society Symposium Proceedings; Vol. 280).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, S, Gysling, HJ, Paz-Pujalt, GR, Blanton, TN, Castro, T, Chen, KM, Fictorie, C, Gladfelter, WL, Franciosi, A, Cohen, PI & Evans, JF 1993, UHV-MOCVD growth and in situ characterization of epitaxial TiO₂ films. in HA Atwater, E Chason, MH Grabow & MG Lagally (eds), Evolution of Surface and Thin Film Microstructure. Materials Research Society Symposium Proceedings, vol. 280, Publ by Materials Research Society, pp. 173-178, Proceedings of the 1992 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/30/92.

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abstract = "Thin films of TiO2 were grown on SrTiO3 and Al2O3 using Ti(OC3H7)4 in the absence of any external oxygen source such as H2O or O2. On SrTiO3 (001), epitaxial anatase (001) formed even at temperatures (800°C) above the anatase to rutile phase transition temperature. In situ reflection high energy electron diffraction (RHEED) was used to monitor structural evolution during growth, and the films were further characterized by Auger electron spectroscopy (AES), transmission electron microscopy (TEM),and x-ray diffraction. Reaction kinetics were monitored using mass spectrometry, and these results, combined with temperature-programmed reaction spectroscopy, gave some insight into the deposition process.",

author = "Samuel Chen and Gysling, {H. J.} and Paz-Pujalt, {G. R.} and Blanton, {T. N.} and T. Castro and Chen, {K. M.} and C. Fictorie and Gladfelter, {W. L.} and A. Franciosi and Cohen, {P. I.} and Evans, {J. F.}",

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AB - Thin films of TiO2 were grown on SrTiO3 and Al2O3 using Ti(OC3H7)4 in the absence of any external oxygen source such as H2O or O2. On SrTiO3 (001), epitaxial anatase (001) formed even at temperatures (800°C) above the anatase to rutile phase transition temperature. In situ reflection high energy electron diffraction (RHEED) was used to monitor structural evolution during growth, and the films were further characterized by Auger electron spectroscopy (AES), transmission electron microscopy (TEM),and x-ray diffraction. Reaction kinetics were monitored using mass spectrometry, and these results, combined with temperature-programmed reaction spectroscopy, gave some insight into the deposition process.

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