Ultra-low power MOSFET-only micromation multi-bit quantizer for implantable neural applications

Junyi Shen, Jian Xu, Xiaobo Wu, Menglian Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Several power and area efficient multi-bit quantizers are discussed in this paper. Through the comparison and analysis of the reported quantizers, a novel ultra-low power MOSFET-only micromation one for implantable neural applications is proposed to optimize the area and power consumption with the use of high density MOS-CAP and dynamic comparators. Simulated in a 0.18μm 1P6M CMOS process, the density of the proposed series-PMOS capacitor reaches 2.1fF/μm2 at a 1.2V supply voltage, which is almost 1.5 times higher than that of the traditional Metal-Insulator-Metal (MIM) capacitor. The current power consumption of the proposed 9-level quantizer is only 0.14μA clocked at 512 kHz, and its area cost is 11200μm2. Compared with the conventional architecture, over 95% power and 80% area are saved. The simulation results show that the proposed quantizer is suitable for Delta-Sigma modulator designs.

Original languageEnglish (US)
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages518-520
Number of pages3
DOIs
StatePublished - Dec 1 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Nov 1 2010Nov 4 2010

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period11/1/1011/4/10

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