Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers

I. N. Krivorotov; G. E. Rowlands; T. Rahman; J. A. Katine; J. Langer; A. Lyle; H. Zhao; J. G. Alzate; A. A. Kovalev; Y. Tserkovnyak; Z. M. Zeng; H. W. Jiang; K. Galatsis; Y. M. Huai; P. Khalili Amiri; K. L. Wang; J. P. Wang

doi:10.1109/DRC.2012.6256944

Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers

I. N. Krivorotov, G. E. Rowlands, T. Rahman, J. A. Katine, J. Langer, A. Lyle, H. Zhao, J. G. Alzate, A. A. Kovalev, Y. Tserkovnyak, Z. M. Zeng, H. W. Jiang, K. Galatsis, Y. M. Huai, P. Khalili Amiri, K. L. Wang, J. P. Wang

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Since the initial prediction and experimental demonstration of magnetization reversal by spin transfer torque (STT), there has been continuous progress toward the development of nonvolatile magnetic random access memory based on STT switching (STT-RAM) in nanoscale magnetic tunnel junctions (MTJs). In the most common STT-RAM configuration shown in Fig. 1(a), the magnetic moments of the free layer and the pinned polarizing layer of an MTJ lie collinear to one another in the plane of the junction. In this configuration (in-plane STT-RAM or IST-RAM), STT is small during the initial stages of the free layer's magnetic moment reversal, resulting in a relatively long nanosecond-scale switching time. Switching can be greatly accelerated in an alternative STT-RAM configuration, in which a second polarizer with magnetic moment perpendicular to the MTJ plane is added to the magnetic multilayer (orthogonal STT-RAM or OST-RAM). The initial STT from the perpendicular polarizer is large and has been predicted to induce ultrafast precessional switching of the free layer's magnetization on a time scale of 100 ps. The differences in the reversal modes expected for the IST-RAM and OST-RAM devices are illustrated in Figs. 1(c) and 1(d), wherein magnetization switching trajectories are shown for the two types of memory.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	211-212
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6256944
State	Published - 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

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Other	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

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10.1109/DRC.2012.6256944

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Krivorotov, I. N., Rowlands, G. E., Rahman, T., Katine, J. A., Langer, J., Lyle, A., Zhao, H., Alzate, J. G., Kovalev, A. A., Tserkovnyak, Y., Zeng, Z. M., Jiang, H. W., Galatsis, K., Huai, Y. M., Khalili Amiri, P., Wang, K. L., & Wang, J. P. (2012). Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 211-212). Article 6256944 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6256944

Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers. / Krivorotov, I. N.; Rowlands, G. E.; Rahman, T. et al.
70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 211-212 6256944 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Krivorotov, IN, Rowlands, GE, Rahman, T, Katine, JA, Langer, J, Lyle, A, Zhao, H, Alzate, JG, Kovalev, AA, Tserkovnyak, Y, Zeng, ZM, Jiang, HW, Galatsis, K, Huai, YM, Khalili Amiri, P, Wang, KL & Wang, JP 2012, Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6256944, Device Research Conference - Conference Digest, DRC, pp. 211-212, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6256944

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title = "Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers",

abstract = "Since the initial prediction and experimental demonstration of magnetization reversal by spin transfer torque (STT), there has been continuous progress toward the development of nonvolatile magnetic random access memory based on STT switching (STT-RAM) in nanoscale magnetic tunnel junctions (MTJs). In the most common STT-RAM configuration shown in Fig. 1(a), the magnetic moments of the free layer and the pinned polarizing layer of an MTJ lie collinear to one another in the plane of the junction. In this configuration (in-plane STT-RAM or IST-RAM), STT is small during the initial stages of the free layer's magnetic moment reversal, resulting in a relatively long nanosecond-scale switching time. Switching can be greatly accelerated in an alternative STT-RAM configuration, in which a second polarizer with magnetic moment perpendicular to the MTJ plane is added to the magnetic multilayer (orthogonal STT-RAM or OST-RAM). The initial STT from the perpendicular polarizer is large and has been predicted to induce ultrafast precessional switching of the free layer's magnetization on a time scale of 100 ps. The differences in the reversal modes expected for the IST-RAM and OST-RAM devices are illustrated in Figs. 1(c) and 1(d), wherein magnetization switching trajectories are shown for the two types of memory.",

author = "Krivorotov, {I. N.} and Rowlands, {G. E.} and T. Rahman and Katine, {J. A.} and J. Langer and A. Lyle and H. Zhao and Alzate, {J. G.} and Kovalev, {A. A.} and Y. Tserkovnyak and Zeng, {Z. M.} and Jiang, {H. W.} and K. Galatsis and Huai, {Y. M.} and {Khalili Amiri}, P. and Wang, {K. L.} and Wang, {J. P.}",

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AU - Katine, J. A.

AU - Langer, J.

AU - Lyle, A.

AU - Zhao, H.

AU - Alzate, J. G.

AU - Kovalev, A. A.

AU - Tserkovnyak, Y.

AU - Zeng, Z. M.

AU - Jiang, H. W.

AU - Galatsis, K.

AU - Huai, Y. M.

AU - Khalili Amiri, P.

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AU - Wang, J. P.

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N2 - Since the initial prediction and experimental demonstration of magnetization reversal by spin transfer torque (STT), there has been continuous progress toward the development of nonvolatile magnetic random access memory based on STT switching (STT-RAM) in nanoscale magnetic tunnel junctions (MTJs). In the most common STT-RAM configuration shown in Fig. 1(a), the magnetic moments of the free layer and the pinned polarizing layer of an MTJ lie collinear to one another in the plane of the junction. In this configuration (in-plane STT-RAM or IST-RAM), STT is small during the initial stages of the free layer's magnetic moment reversal, resulting in a relatively long nanosecond-scale switching time. Switching can be greatly accelerated in an alternative STT-RAM configuration, in which a second polarizer with magnetic moment perpendicular to the MTJ plane is added to the magnetic multilayer (orthogonal STT-RAM or OST-RAM). The initial STT from the perpendicular polarizer is large and has been predicted to induce ultrafast precessional switching of the free layer's magnetization on a time scale of 100 ps. The differences in the reversal modes expected for the IST-RAM and OST-RAM devices are illustrated in Figs. 1(c) and 1(d), wherein magnetization switching trajectories are shown for the two types of memory.

AB - Since the initial prediction and experimental demonstration of magnetization reversal by spin transfer torque (STT), there has been continuous progress toward the development of nonvolatile magnetic random access memory based on STT switching (STT-RAM) in nanoscale magnetic tunnel junctions (MTJs). In the most common STT-RAM configuration shown in Fig. 1(a), the magnetic moments of the free layer and the pinned polarizing layer of an MTJ lie collinear to one another in the plane of the junction. In this configuration (in-plane STT-RAM or IST-RAM), STT is small during the initial stages of the free layer's magnetic moment reversal, resulting in a relatively long nanosecond-scale switching time. Switching can be greatly accelerated in an alternative STT-RAM configuration, in which a second polarizer with magnetic moment perpendicular to the MTJ plane is added to the magnetic multilayer (orthogonal STT-RAM or OST-RAM). The initial STT from the perpendicular polarizer is large and has been predicted to induce ultrafast precessional switching of the free layer's magnetization on a time scale of 100 ps. The differences in the reversal modes expected for the IST-RAM and OST-RAM devices are illustrated in Figs. 1(c) and 1(d), wherein magnetization switching trajectories are shown for the two types of memory.

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ER -

Ultrafast spin torque memory based on magnetic tunnel junctions with combined in-plane and perpendicular polarizers

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