Ultrathin one-dimensional molybdenum telluride quantum wires synthesized by chemical vapor deposition

One-dimensional (1D) transition-metal chalcogenides (TMCs) are attracting increasing scientific and technological interest, especially for ultrasmall electronic interconnects and highly active catalysts. However, it is quite challenging to synthesize high-quality 1D TMCs over large areas on substrates. Here, we report on an atmospheric-pressure vapor-phase synthetic strategy for growing ultrathin 1D Mo₆Te₆ wires on various substrates such as Si₃N₄, SiO₂, and doped SiC, employing double MoO₃ sources. Scanning transmission electron microscopy confirms that the ultrathin 1D Mo₆Te₆ wires possessing thicknesses of 3−5 nm grow laterally to form wire networks. Lattice-resolution electron energy loss spectroscopy mapping clearly shows intensity variations of Mo-M_4,5 and Te-M_4,5 signals originating from Mo and Te atoms in the monoclinic Mo₆Te₆ structure. Furthermore, we investigate the vibrational modes of 1D Mo₆Te₆ wire networks, confirming that the two characteristic Raman peaks at 155 and 245 cm⁻¹ are associated with resonance Raman scattering. The 1D Mo₆Te₆ wire networks not only possess excellent transparency in the near-infrared range but also are electrically conductive. They also exhibit temperature-dependent Hall effects. We believe that these ultrathin 1D Mo₆Te₆ wires are auspicious materials for future electronics and catalysis.