Unexpected crystal and domain structures and properties in compositionally graded PbZr1-xTixO3 thin films

R. V.K. Mangalam; J. Karthik; Anoop R. Damodaran; Joshua C. Agar; Lane W. Martin

doi:10.1002/adma.201204240

Unexpected crystal and domain structures and properties in compositionally graded PbZr_1-xTi_xO₃ thin films

R. V.K. Mangalam, J. Karthik, Anoop R. Damodaran, Joshua C. Agar, Lane W. Martin

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Synthesis of compositionally graded versions of PbZr_1-xTi _xO₃ thin films results in unprecedented strains (as large as ≈4.5 × 10⁵ m^-1) and correspondingly unexpected crystal structures, ferroelectric domain structures, and properties. This includes the observation of built-in electric fields in films as large as 200 kV/cm. Compositional and strain gradients could represent a new direction of strain-control of materials.

Original language	English (US)
Pages (from-to)	1761-1767
Number of pages	7
Journal	Advanced Materials
Volume	25
Issue number	12
DOIs	https://doi.org/10.1002/adma.201204240
State	Published - Mar 25 2013
Externally published	Yes

Keywords

bilayers
built-in potential
compositionally graded heterostructures
dielectric and ferroelectric properties
ferroelectric domain structures

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10.1002/adma.201204240

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AU - Agar, Joshua C.

AU - Martin, Lane W.

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KW - dielectric and ferroelectric properties

KW - ferroelectric domain structures

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