Using Spin-Hall MTJs to Build an Energy-Efficient In-memory Computation Platform

Masoud Zabihi, Zhengyang Zhao, D. C. Mahendra, Zamshed I. Chowdhury, Salonik Resch, Thomas Peterson, Ulya R. Karpuzcu, Jian Ping Wang, Sachin S. Sapatnekar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We present the Spin Hall Effect (SHE) Computational Random Access Memory (CRAM) for in-memory computation, incorporating considerations at the device, gate, and functional levels. For two specific applications (2-D convolution and neuromorphic digit recognition), we show that SHE-CRAM is 3x faster and has over 4x lower energy than a prior STT-based CRAM implementation, and is over 2000x faster and at least 130x more energy-efficient than state-of-the-art near-memory processing.

Original languageEnglish (US)
Title of host publicationProceedings of the 20th International Symposium on Quality Electronic Design, ISQED 2019
PublisherIEEE Computer Society
Pages52-57
Number of pages6
ISBN (Electronic)9781728103921
DOIs
StatePublished - Apr 23 2019
Event20th International Symposium on Quality Electronic Design, ISQED 2019 - Santa Clara, United States
Duration: Mar 6 2019Mar 7 2019

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2019-March
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference20th International Symposium on Quality Electronic Design, ISQED 2019
Country/TerritoryUnited States
CitySanta Clara
Period3/6/193/7/19

Bibliographical note

Funding Information:
Accepted 31 October 2003. The authors thank the Norwegian Research Council (NFR 125693/720 and 140730/720), the Norwegian Ministry of Environment Transport and Effect Programme, and the Toxic Substances Research Initiative in Canada for funding this study. The authors thank Tine Borgen for performing the serological analysis. Current address for Andrew E. Derocher is University of Alberta, Department of Biological Sciences, T6G 2E9 Edmonton, Alberta, Canada. Address correspondence to Janneche Utne Skaare, National Veterinary Institute, The Norwegian School of Veterinary Science, PO Box 8156, Dep. N-0033 Oslo, Norway. E-mail: janneche.skaare@vetinst.no

Publisher Copyright:
© 2019 IEEE.

Keywords

  • In-memory computing
  • Neuromorphic computing
  • Nonvolatile memory
  • SHE-CRAM
  • Spintronics

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