Abstract
We present the Spin Hall Effect (SHE) Computational Random Access Memory (CRAM) for in-memory computation, incorporating considerations at the device, gate, and functional levels. For two specific applications (2-D convolution and neuromorphic digit recognition), we show that SHE-CRAM is 3x faster and has over 4x lower energy than a prior STT-based CRAM implementation, and is over 2000x faster and at least 130x more energy-efficient than state-of-the-art near-memory processing.
Original language | English (US) |
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Title of host publication | Proceedings of the 20th International Symposium on Quality Electronic Design, ISQED 2019 |
Publisher | IEEE Computer Society |
Pages | 52-57 |
Number of pages | 6 |
ISBN (Electronic) | 9781728103921 |
DOIs | |
State | Published - Apr 23 2019 |
Event | 20th International Symposium on Quality Electronic Design, ISQED 2019 - Santa Clara, United States Duration: Mar 6 2019 → Mar 7 2019 |
Publication series
Name | Proceedings - International Symposium on Quality Electronic Design, ISQED |
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Volume | 2019-March |
ISSN (Print) | 1948-3287 |
ISSN (Electronic) | 1948-3295 |
Conference
Conference | 20th International Symposium on Quality Electronic Design, ISQED 2019 |
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Country/Territory | United States |
City | Santa Clara |
Period | 3/6/19 → 3/7/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
Keywords
- In-memory computing
- Neuromorphic computing
- Nonvolatile memory
- SHE-CRAM
- Spintronics