Abstract
We report the successful realization of a plasmonic-based heptalayer self-assembled InGaAs quantum-dot infrared photodetector (QDIP) using self-assembled AuGe nanoparticles. In comparison with as-grown device, AuGe detector showed a 30% increase in spectral response at a peak of ~5 μm and −1 V bias. We achieved two-order increment in peak responsivity of AuGe plasmonic-based detector in comparison to as-grown detector at 80 K. The improvements are attributed to increased light trapping in the device and strong plasmonic-QD interaction by the AuGe nanoparticles. In this technique, AuGe nanoparticles are self-assembled; therefore they don’t require very fine optical or e-beam lithography for patterning, indicating this technique will be helpful in reducing the cost of plasmonic based high-performance detectors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 12497-12502 |
| Number of pages | 6 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 28 |
| Issue number | 17 |
| DOIs | |
| State | Published - Sep 1 2017 |
Bibliographical note
Funding Information:We would like to thank Department of Science and Technology (DST) for financially supporting it. We are also very thankful to (i) the Ministry of Communications & Information Technology, Government of India, through the CEN, IIT Bombay and (ii) Riber France for partially supporting this work.
Publisher Copyright:
© 2017, Springer Science+Business Media New York.