We report the successful realization of a plasmonic-based heptalayer self-assembled InGaAs quantum-dot infrared photodetector (QDIP) using self-assembled AuGe nanoparticles. In comparison with as-grown device, AuGe detector showed a 30% increase in spectral response at a peak of ~5 μm and −1 V bias. We achieved two-order increment in peak responsivity of AuGe plasmonic-based detector in comparison to as-grown detector at 80 K. The improvements are attributed to increased light trapping in the device and strong plasmonic-QD interaction by the AuGe nanoparticles. In this technique, AuGe nanoparticles are self-assembled; therefore they don’t require very fine optical or e-beam lithography for patterning, indicating this technique will be helpful in reducing the cost of plasmonic based high-performance detectors.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Materials Science: Materials in Electronics|
|State||Published - Sep 1 2017|
Bibliographical noteFunding Information:
We would like to thank Department of Science and Technology (DST) for financially supporting it. We are also very thankful to (i) the Ministry of Communications & Information Technology, Government of India, through the CEN, IIT Bombay and (ii) Riber France for partially supporting this work.