Utilization of self-assembled AuGe nanoparticles for improving performance of InGaAs/GaAs quantum dot infrared detector

Sushil Kumar Pandey, Lavi Tyagi, Hemant Ghadi, Harshal Rawool, Subhananda Chakrabarti

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report the successful realization of a plasmonic-based heptalayer self-assembled InGaAs quantum-dot infrared photodetector (QDIP) using self-assembled AuGe nanoparticles. In comparison with as-grown device, AuGe detector showed a 30% increase in spectral response at a peak of ~5 μm and −1 V bias. We achieved two-order increment in peak responsivity of AuGe plasmonic-based detector in comparison to as-grown detector at 80 K. The improvements are attributed to increased light trapping in the device and strong plasmonic-QD interaction by the AuGe nanoparticles. In this technique, AuGe nanoparticles are self-assembled; therefore they don’t require very fine optical or e-beam lithography for patterning, indicating this technique will be helpful in reducing the cost of plasmonic based high-performance detectors.

Original languageEnglish (US)
Pages (from-to)12497-12502
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number17
DOIs
StatePublished - Sep 1 2017

Bibliographical note

Funding Information:
We would like to thank Department of Science and Technology (DST) for financially supporting it. We are also very thankful to (i) the Ministry of Communications & Information Technology, Government of India, through the CEN, IIT Bombay and (ii) Riber France for partially supporting this work.

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