@inproceedings{ba045dd195aa4881a4237b3899290fa7,
title = "Utilizing reverse short channel effect for optimal subthreshold circuit design",
abstract = "The impact of the Reverse Short Channel Effect (RSCE) on device current is stronger in the subthreshold region due to the reduced Drain-Induced-Barrier- Lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, and better subthreshold swing. Simulation results using ISCAS benchmark circuits show that the critical path delay and power consumption can be improved by up to 10.4% and 34.4%, respectively.",
keywords = "Digital circuits, Optimization, PVT variations, Reverse short channel effect, Subthreshold circuits, Subthreshold operation",
author = "Kim, {Tae Hyoung} and Hanyong Eom and John Keane and Kim, {Chris H.}",
year = "2006",
doi = "10.1145/1165573.1165603",
language = "English (US)",
isbn = "1595934626",
series = "Proceedings of the International Symposium on Low Power Electronics and Design",
pages = "127--130",
booktitle = "ISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design",
note = "ISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design ; Conference date: 04-10-2006 Through 06-10-2006",
}