Utilizing reverse short channel effect for optimal subthreshold circuit design

Tae Hyoung Kim, Hanyong Eom, John Keane, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

35 Scopus citations

Abstract

The impact of the Reverse Short Channel Effect (RSCE) on device current is stronger in the subthreshold region due to the reduced Drain-Induced-Barrier- Lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, and better subthreshold swing. Simulation results using ISCAS benchmark circuits show that the critical path delay and power consumption can be improved by up to 10.4% and 34.4%, respectively.

Original languageEnglish (US)
Title of host publicationISLPED'06 - Proceedings of the 2006 International Symposium on Low Power Electronics and Design
Pages127-130
Number of pages4
DOIs
StatePublished - Dec 1 2006
EventISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design - Tegernsee, Bavaria, Germany
Duration: Oct 4 2006Oct 6 2006

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
Volume2006
ISSN (Print)1533-4678

Other

OtherISLPED'06 - 11th ACM/IEEE International Symposium on Low Power Electronics and Design
Country/TerritoryGermany
CityTegernsee, Bavaria
Period10/4/0610/6/06

Keywords

  • Digital circuits
  • Optimization
  • PVT variations
  • Reverse short channel effect
  • Subthreshold circuits
  • Subthreshold operation

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