TY - GEN
T1 - Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces
AU - Carlson, Brooke A.
AU - Leschkies, Kurtis
AU - Aydil, Eray
AU - Zhu, Xiaoyang
PY - 2008
Y1 - 2008
N2 - Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.
AB - Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.
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M3 - Conference contribution
AN - SCOPUS:77955593372
SN - 9780841269859
T3 - ACS National Meeting Book of Abstracts
BT - American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers
T2 - 235th National Meeting of the American Chemical Society, ACS 2008
Y2 - 6 April 2008 through 10 April 2008
ER -
