Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Reid J. Chesterfield, John C. McKeen, Christopher R. Newman, C. Daniel Frisbie, Paul C. Ewbank, Kent R. Mann, Larry L. Miller

Research output: Contribution to journalArticlepeer-review

190 Scopus citations

Abstract

The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

Original languageEnglish (US)
Pages (from-to)6396-6405
Number of pages10
JournalJournal of Applied Physics
Volume95
Issue number11 I
DOIs
StatePublished - Jun 1 2004

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