Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Reid J. Chesterfield; John C. McKeen; Christopher R. Newman; C. Daniel Frisbie; Paul C. Ewbank; Kent R. Mann; Larry L. Miller

doi:10.1063/1.1710729

Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Reid J. Chesterfield, John C. McKeen, Christopher R. Newman, C. Daniel Frisbie, Paul C. Ewbank, Kent R. Mann, Larry L. Miller

Research output: Contribution to journal › Article › peer-review

202 Scopus citations

Abstract

The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C ₅), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C ₅. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C ₅. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C ₅ OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

Original language	English (US)
Pages (from-to)	6396-6405
Number of pages	10
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1710729
State	Published - Jun 1 2004

Access

10.1063/1.1710729

OpenUrl availability

Full text

Cite this

@article{58eb11858b684472a5c5a5d9b700d8ff,

title = "Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors",

abstract = "The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.",

author = "Chesterfield, {Reid J.} and McKeen, {John C.} and Newman, {Christopher R.} and Frisbie, {C. Daniel} and Ewbank, {Paul C.} and Mann, {Kent R.} and Miller, {Larry L.}",

year = "2004",

month = jun,

day = "1",

doi = "10.1063/1.1710729",

language = "English (US)",

volume = "95",

pages = "6396--6405",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11 I",

}

TY - JOUR

T1 - Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

AU - Chesterfield, Reid J.

AU - McKeen, John C.

AU - Newman, Christopher R.

AU - Frisbie, C. Daniel

AU - Ewbank, Paul C.

AU - Mann, Kent R.

AU - Miller, Larry L.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

AB - The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

UR - http://www.scopus.com/inward/record.url?scp=2942668437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942668437&partnerID=8YFLogxK

U2 - 10.1063/1.1710729

DO - 10.1063/1.1710729

M3 - Article

AN - SCOPUS:2942668437

SN - 0021-8979

VL - 95

SP - 6396

EP - 6405

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 I

ER -

Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this