Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films

Mayur S. Valipa; Eray S. Aydil; Dimitrios Maroudas

doi:10.1109/TPS.2005.845000

Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films

Mayur S. Valipa, Eray S. Aydil, Dimitrios Maroudas

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

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Abstract

Fundamental understanding of atomic-scale processes that determine the surface morphology of hydrogenated amorphous silicon (a-Si:H) thin films during plasma deposition is essential to develop systematic strategies for depositing smooth device-quality a-Si:H films. We have developed visualization tools for monitoring the evolution of surface morphology, atomic coordination, and bond strain distribution during radical precursor migration on a-Si:H surfaces; these tools are used here to study the mechanisms of SiH₃ diffusion on the a-Si:H surface and elucidate valley-filling phenomena leading to smooth a-Si:H films. We present surface characterization results during a radical migration trajectory representative of the early stage of plasma deposition: The SiH₃ precursor is impinged on a hill and migrates until it is incorporated into a nearby valley on the a-Si:H surface.

Original language	English (US)
Pages (from-to)	228-229
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	33
Issue number	2 I
DOIs	https://doi.org/10.1109/TPS.2005.845000
State	Published - Apr 2005

Bibliographical note

Funding Information:
Manuscript received June 11, 2004; revised November 8, 2004. This work was supported in part by the National Science Foundation/Department of Energy Partnership for Basic Plasma Science and Engineering under Awards ECS-0317345 and ECS-0317459 and in part by the National Science Foundation/Information Technology Research under Grant CTS-0205584. The work of E. S. Aydil and D. Maroudas was also supported by the Camille Dreyfus Teacher-Scholar Awards.

Keywords

Hyrdrogenated amorphous silicon thin films
Molecular dynamics
Plasma CVD
Surface morphology
Surface reactors
Surface strain

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title = "Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films",

abstract = "Fundamental understanding of atomic-scale processes that determine the surface morphology of hydrogenated amorphous silicon (a-Si:H) thin films during plasma deposition is essential to develop systematic strategies for depositing smooth device-quality a-Si:H films. We have developed visualization tools for monitoring the evolution of surface morphology, atomic coordination, and bond strain distribution during radical precursor migration on a-Si:H surfaces; these tools are used here to study the mechanisms of SiH3 diffusion on the a-Si:H surface and elucidate valley-filling phenomena leading to smooth a-Si:H films. We present surface characterization results during a radical migration trajectory representative of the early stage of plasma deposition: The SiH3 precursor is impinged on a hill and migrates until it is incorporated into a nearby valley on the a-Si:H surface.",

keywords = "Hyrdrogenated amorphous silicon thin films, Molecular dynamics, Plasma CVD, Surface morphology, Surface reactors, Surface strain",

author = "Valipa, {Mayur S.} and Aydil, {Eray S.} and Dimitrios Maroudas",

note = "Funding Information: Manuscript received June 11, 2004; revised November 8, 2004. This work was supported in part by the National Science Foundation/Department of Energy Partnership for Basic Plasma Science and Engineering under Awards ECS-0317345 and ECS-0317459 and in part by the National Science Foundation/Information Technology Research under Grant CTS-0205584. The work of E. S. Aydil and D. Maroudas was also supported by the Camille Dreyfus Teacher-Scholar Awards.",

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N2 - Fundamental understanding of atomic-scale processes that determine the surface morphology of hydrogenated amorphous silicon (a-Si:H) thin films during plasma deposition is essential to develop systematic strategies for depositing smooth device-quality a-Si:H films. We have developed visualization tools for monitoring the evolution of surface morphology, atomic coordination, and bond strain distribution during radical precursor migration on a-Si:H surfaces; these tools are used here to study the mechanisms of SiH3 diffusion on the a-Si:H surface and elucidate valley-filling phenomena leading to smooth a-Si:H films. We present surface characterization results during a radical migration trajectory representative of the early stage of plasma deposition: The SiH3 precursor is impinged on a hill and migrates until it is incorporated into a nearby valley on the a-Si:H surface.

AB - Fundamental understanding of atomic-scale processes that determine the surface morphology of hydrogenated amorphous silicon (a-Si:H) thin films during plasma deposition is essential to develop systematic strategies for depositing smooth device-quality a-Si:H films. We have developed visualization tools for monitoring the evolution of surface morphology, atomic coordination, and bond strain distribution during radical precursor migration on a-Si:H surfaces; these tools are used here to study the mechanisms of SiH3 diffusion on the a-Si:H surface and elucidate valley-filling phenomena leading to smooth a-Si:H films. We present surface characterization results during a radical migration trajectory representative of the early stage of plasma deposition: The SiH3 precursor is impinged on a hill and migrates until it is incorporated into a nearby valley on the a-Si:H surface.

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KW - Surface morphology

KW - Surface reactors

KW - Surface strain

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Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films

Abstract

Bibliographical note

Keywords

UN SDGs

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