Projects per year
Abstract
Two-dimensional MoS2 is an excellent channel material for ultrathin field-effect transistors, but high contact resistance across the deposited metal-MoS2 interface continues to limit its full realization. Using atomic-resolution scanning transmission electron microscopy and first-principles calculations, we showed that deposited metals with a high affinity for sulfur could have a fundamental limitation. Ti-MoS2 contact shows a destruction of the MoS2 layers, a formation of clusters and void pockets, and penetration of Ti into MoS2, resulting in many localized pinning states in the band gap. InAu-MoS2 contact shows that it is possible to achieve a van der Waals-type interface and dramatically reduced pinning states.
Original language | English (US) |
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Article number | 111001 |
Journal | Physical Review Materials |
Volume | 3 |
Issue number | 11 |
DOIs | |
State | Published - Nov 8 2019 |
Bibliographical note
Publisher Copyright:© 2019 American Physical Society.
How much support was provided by MRSEC?
- Partial
Reporting period for MRSEC
- Period 6
Fingerprint
Dive into the research topics of 'Visualizing the metal-Mo S2 contacts in two-dimensional field-effect transistors with atomic resolution'. Together they form a unique fingerprint.-
MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.
9/1/98 → …
Project: Research project
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MRSEC IRG-2: Sustainable Nanocrystal Materials
Kortshagen, U. R., Aydil, E. S., Campbell, S. A., Francis, L. F., Haynes, C. L., Hogan, C., Mkhoyan, A., Shklovskii, B. I. & Wang, X.
9/1/98 → …
Project: Research project
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