Wide-gap semiconducting graphene from nitrogen-seeded SiC

F. Wang; G. Liu; S. Rothwell; M. Nevius; A. Tejeda; A. Taleb-Ibrahimi; L. C. Feldman; P. I. Cohen; E. H. Conrad

doi:10.1021/nl402544n

Wide-gap semiconducting graphene from nitrogen-seeded SiC

F. Wang, G. Liu, S. Rothwell, M. Nevius, A. Tejeda, A. Taleb-Ibrahimi, L. C. Feldman, P. I. Cohen, E. H. Conrad

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

Original language	English (US)
Pages (from-to)	4827-4832
Number of pages	6
Journal	Nano letters
Volume	13
Issue number	10
DOIs	https://doi.org/10.1021/nl402544n
State	Published - Oct 9 2013

Keywords

Graphene
SiC
dopants
graphite
graphite thin film
silicon carbide

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AU - Wang, F.

AU - Liu, G.

AU - Rothwell, S.

AU - Nevius, M.

AU - Tejeda, A.

AU - Taleb-Ibrahimi, A.

AU - Feldman, L. C.

AU - Cohen, P. I.

AU - Conrad, E. H.

PY - 2013/10/9

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N2 - All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

AB - All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

KW - Graphene

KW - SiC

KW - dopants

KW - graphite

KW - graphite thin film

KW - silicon carbide

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Wide-gap semiconducting graphene from nitrogen-seeded SiC

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