In the vicinity of the Fermi energy, the band structure of graphene is well described by a Dirac equation. Impurities will generally induce both a scalar potential as well as a (fictitious) gauge field acting on the Dirac fermions. We show that the angular dependence of the zero-bias anomaly in the spatially resolved tunneling density of states around a particular impurity allows one to distinguish between these two contributions. Our predictions can be tested in scanning-tunneling-microscopy measurements on graphene.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Oct 2 2007|