TY - JOUR
T1 - A criterion for dewetting initiation from surface disturbances on ultrathin polymer films
AU - Karapanagiotis, Ioannis
AU - Gerberich, William W
PY - 2005/9/27
Y1 - 2005/9/27
N2 - Nanoindentation-induced defects on ultrathin (h = 17 nm) polystyrene (PS) films that are spin cast on silicon (Si) substrates, with residual depths of penetration lower than the film thickness (<17 nm), can either grow to initiate dewetting or level, which results in a flat polymer surface, upon heating above the glass-transition temperature (T g). The excess surface energy (ΔF γ) of the system, which is added to the initially flat coating with the formation of an indent, provides a critical value, ΔF γ,crit = 6.1 × 10 -16 J, which determines indent evolution upon annealing. An indent grows when ΔF γ > ΔF γ,crit and levels when ΔF γ < ΔF γ,crit. This conclusion is in agreement with previous reports, which used ΔF γ to distinguish the two (dewetting/leveling) opposing processes (1) in the case of indents deeper than the film thickness and (2) in the case of built-in ordered surface disturbances by capillary force lithography.
AB - Nanoindentation-induced defects on ultrathin (h = 17 nm) polystyrene (PS) films that are spin cast on silicon (Si) substrates, with residual depths of penetration lower than the film thickness (<17 nm), can either grow to initiate dewetting or level, which results in a flat polymer surface, upon heating above the glass-transition temperature (T g). The excess surface energy (ΔF γ) of the system, which is added to the initially flat coating with the formation of an indent, provides a critical value, ΔF γ,crit = 6.1 × 10 -16 J, which determines indent evolution upon annealing. An indent grows when ΔF γ > ΔF γ,crit and levels when ΔF γ < ΔF γ,crit. This conclusion is in agreement with previous reports, which used ΔF γ to distinguish the two (dewetting/leveling) opposing processes (1) in the case of indents deeper than the film thickness and (2) in the case of built-in ordered surface disturbances by capillary force lithography.
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U2 - 10.1021/la050998h
DO - 10.1021/la050998h
M3 - Article
C2 - 16171351
AN - SCOPUS:26444497064
SN - 0743-7463
VL - 21
SP - 9194
EP - 9198
JO - Langmuir
JF - Langmuir
IS - 20
ER -