A fast magnetoelectric device based on current-driven domain wall propagation

Meghna G. Mankalale, Zhaoxin Liang, Angeline Klemm Smith, D. C. Mahendra, Mahdi Jamali, Jian Ping Wang, Sachin S. Sapatnekar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Several emerging spintronic devices have recently been proposed, performing computation by (a) generating spin currents based on input magnet states to switch an output magnet state using Spin-Transfer Torque (STT) [1,2], (b) using multiple nanopillars to drive a domain wall (DW) that switches an output nanopillar using STT [7], and (c) using magnetoelectric (ME) switching at the input, combined with DW automotion, to switch an output state [3]. All of these devices have delays of several nanoseconds. The energy for (a) and (b) is in the range of femtoJoules, while the ME mechanism in (c) facilitates greater energy-efficiency, in the aJ range. These numbers fall some distance away from CMOS, where gate delays and switching energies are in the range of picoseconds (ps) and attoJoules (aJ), respectively.

Original languageEnglish (US)
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
DOIs
StatePublished - Aug 22 2016
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: Jun 19 2016Jun 22 2016

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2016-August
ISSN (Print)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period6/19/166/22/16

Fingerprint Dive into the research topics of 'A fast magnetoelectric device based on current-driven domain wall propagation'. Together they form a unique fingerprint.

Cite this