A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth

Engineering & Materials Science

• Crystal growth 100%
• Silicon carbide 76%
• Silicon 55%
• Particle size 44%
• Particle interactions 33%
• Microgravity 29%
• Melting point 25%
• Solidification 23%
• Drag 21%
• Numerical models 19%
• Liquids 15%
• Experiments 8%

Chemical Compounds

• Silicon Carbide 79%
• Crystal Growth 69%
• Velocity 59%
• Microgravity 52%
• Solidification 39%
• Thermal Conductivity 33%
• Melting Point 29%
• Liquid 19%

Physics & Astronomy

• silicon carbides 68%
• crystal growth 66%
• scaling 49%
• silicon 38%
• thermoelectricity 33%
• critical velocity 28%
• microgravity 13%
• drag 11%
• solidification 10%
• deflection 10%
• inclusions 9%
• thermal conductivity 9%
• melting 9%
• curvature 9%
• liquids 6%
• interactions 4%
• temperature 3%