A semiconductor process for cointegration of BAW thin-film piezoelectrics with microwave BJTs

R. J. Weber; S. G. Burns; S. D. Braymen

A semiconductor process for cointegration of BAW thin-film piezoelectrics with microwave BJTs

R. J. Weber, S. G. Burns, S. D. Braymen

Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

A compatible process for the monolithic integration of the BAW (bulk acoustic wave) piezoelectric thin-film resonator with silicon BJTs (bipolar junction transistors) is presented. The process uses RIE (reactive ion etching) trench-isolated BJTs cointegrated with high-Q AlN resonators which do not use the p⁺ etch stop. Dielectrically assisted liftoff is used for AlN definition. The process is used for the design of a semicustom ASIC (application-specific integrated circuit) palette consisting of resonators, BJTs, resistors, and digitally weighted MOS capacitors. This ASIC palette is then used for the design of 1-GHz oscillators. To facilitate the use of SPICE and S-parameter techniques, resonator equivalent circuit elements are obtained using TOUCHSTONE optimization routines.

Original language	English (US)
Pages (from-to)	525-528
Number of pages	4
Journal	Ultrasonics Symposium Proceedings
Volume	1
State	Published - Dec 1 1990
Event	Proceedings of the IEEE 1990 Ultrasonics Symposium - Honolulu, HI, USA Duration: Dec 4 1990 → Dec 7 1990

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title = "A semiconductor process for cointegration of BAW thin-film piezoelectrics with microwave BJTs",

abstract = "A compatible process for the monolithic integration of the BAW (bulk acoustic wave) piezoelectric thin-film resonator with silicon BJTs (bipolar junction transistors) is presented. The process uses RIE (reactive ion etching) trench-isolated BJTs cointegrated with high-Q AlN resonators which do not use the p+ etch stop. Dielectrically assisted liftoff is used for AlN definition. The process is used for the design of a semicustom ASIC (application-specific integrated circuit) palette consisting of resonators, BJTs, resistors, and digitally weighted MOS capacitors. This ASIC palette is then used for the design of 1-GHz oscillators. To facilitate the use of SPICE and S-parameter techniques, resonator equivalent circuit elements are obtained using TOUCHSTONE optimization routines.",

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AU - Burns, S. G.

AU - Braymen, S. D.

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N2 - A compatible process for the monolithic integration of the BAW (bulk acoustic wave) piezoelectric thin-film resonator with silicon BJTs (bipolar junction transistors) is presented. The process uses RIE (reactive ion etching) trench-isolated BJTs cointegrated with high-Q AlN resonators which do not use the p+ etch stop. Dielectrically assisted liftoff is used for AlN definition. The process is used for the design of a semicustom ASIC (application-specific integrated circuit) palette consisting of resonators, BJTs, resistors, and digitally weighted MOS capacitors. This ASIC palette is then used for the design of 1-GHz oscillators. To facilitate the use of SPICE and S-parameter techniques, resonator equivalent circuit elements are obtained using TOUCHSTONE optimization routines.

AB - A compatible process for the monolithic integration of the BAW (bulk acoustic wave) piezoelectric thin-film resonator with silicon BJTs (bipolar junction transistors) is presented. The process uses RIE (reactive ion etching) trench-isolated BJTs cointegrated with high-Q AlN resonators which do not use the p+ etch stop. Dielectrically assisted liftoff is used for AlN definition. The process is used for the design of a semicustom ASIC (application-specific integrated circuit) palette consisting of resonators, BJTs, resistors, and digitally weighted MOS capacitors. This ASIC palette is then used for the design of 1-GHz oscillators. To facilitate the use of SPICE and S-parameter techniques, resonator equivalent circuit elements are obtained using TOUCHSTONE optimization routines.

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A semiconductor process for cointegration of BAW thin-film piezoelectrics with microwave BJTs

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