An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

Tae Hyoung Kim, Jason Liu, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Scopus citations

Abstract

We propose a technique for improving write margin and read performance of 8T subthreshold SRAMs by using long channel devices to utilize the pronounced reverse short channel effect. Simulations show that the proposed cell at 0.2V has a write margin equivalent to a conventional cell at 0.27V. The Ion-to-Ioff ratio of the read path also improved from 169 to 271 and a 52% speedup for read was achieved. The cell area overhead was 20%.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages241-244
Number of pages4
ISBN (Electronic)1424407869, 9781424407866
DOIs
StatePublished - Jan 1 2007
Event29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007 - San Jose, United States
Duration: Sep 16 2007Sep 19 2007

Publication series

NameProceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007

Conference

Conference29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007
CountryUnited States
CitySan Jose
Period9/16/079/19/07

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