An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim; Kaushik Roy; Steven Hsu; Ram K. Krishnamurthy; Shekhar Borkar

An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim, Kaushik Roy, Steven Hsu, Ram K. Krishnamurthy, Shekhar Borkar

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V₁ CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.

Original language	English (US)
Title of host publication	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	221-222
Number of pages	2
State	Published - Oct 10 2005
Event	2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States Duration: May 9 2005 → May 11 2005

Other

Other	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Country/Territory	United States
City	Austin, TX
Period	5/9/05 → 5/11/05

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Kim, CH, Roy, K, Hsu, S, Krishnamurthy, RK & Borkar, S 2005, An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations. in 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. pp. 221-222, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, Austin, TX, United States, 5/9/05.

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abstract = "This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V1 CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.",

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AU - Borkar, Shekhar

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AB - This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-V1 CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs.

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M3 - Conference contribution

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BT - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

T2 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

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ER -

An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

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