Analytical electron microscopy study of growth mechanism for smoothing of metallic multilayer thin films

O. Ozatay, K. A. Mkhoyan, M. G. Thomas, G. D. Fuchs, J. Silcox, R. A. Buhrman

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Abstract

We have used scanning transmission electron microscopy and electron energy-loss spectroscopy techniques to study the nature of interfacial interactions in a TaCu Ox stack that give rise to a smooth surface morphology, which can be utilized for seeding thin magnetic multilayer devices. Our measurements reveal that the interfacial smoothing is mainly due to the preferential reaction of Ta with O at the TaCu Ox interface assisted by grain boundary diffusion of oxygen which thereby acts to smooth out the surface roughness created by the large crystalline grains of Cu.

Original languageEnglish (US)
Article number162509
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
StatePublished - 2006

Bibliographical note

Funding Information:
This research was supported by the National Science Foundation through the NSEC program support of the Center for Nanoscale Systems and through its MRSEC program support of the Cornell Center for Materials Research.

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