Charge trapping and degradation of high permittivity TiO₂ dielectric metal-oxide semiconductor field effect transistors

Engineering & Materials Science

• Charge trapping 100%
• MOSFET devices 74%
• Interface states 65%
• Permittivity 63%
• Energy gap 48%
• Degradation 44%
• Organic chemicals 32%
• Capacitance measurement 30%
• Voltage measurement 26%
• Chemical vapor deposition 24%
• Electric breakdown 23%
• Titanium 20%
• Capacitance 18%
• Metals 13%
• Electric potential 10%

Chemical Compounds

• Permittivity 70%
• Field Effect 63%
• Dielectric Material 56%
• Metal Oxide 52%
• Semiconductor 48%
• Tunneling Current 32%
• Interface State 32%
• Band Gap 31%
• Liquid Film 30%
• Nonconductor 23%
• Voltage 15%
• Time 7%

Physics & Astronomy

• metal oxide semiconductors 65%
• field effect transistors 49%
• trapping 49%
• degradation 47%
• permittivity 44%
• capacitance 33%
• electrical measurement 20%
• metalorganic chemical vapor deposition 20%
• titanium 17%
• leakage 17%
• breakdown 16%
• insulators 15%
• injection 15%
• low frequencies 14%
• electric potential 11%