Controlled deposition of NIST-traceable nanoparticles as additional size standards for photomask applications

Jing Wang, David Y H Pui, Chaolong Qi, Se Jin Yook, Heinz Fissan, Erdem Ultanir, Ted Liang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Particle standard is important and widely used for calibration of inspection tools and process characterization and benchmarking. We have developed a method for generating and classifying monodisperse particles of different materials with a high degree of control. The airborne particles are first generated by an electrospray. Then a tandem Differential Mobility Analyzer (TDMA) system is used to obtain monodisperse particles with NIST-traceable sizes. We have also developed a clean and well-controlled method to deposit airborne particles on mask blanks or wafers. This method utilizes electrostatic approach to deposit particles evenly in a desired spot. Both the number of particles and the spot size are well controlled. We have used our system to deposit PSL, silica and gold particles ranging from 30 nm to 125 nm on 193nm and EUV mask blanks. We report the experimental results of using these particles as calibration standards and discuss the dependency of sensitivity on the types of particles and substrate surfaces.

Original languageEnglish (US)
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXII
DOIs
StatePublished - Dec 1 2008
EventMetrology, Inspection, and Process Control for Microlithography XXII - San Jose, CA, United States
Duration: Feb 25 2008Feb 28 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6922
ISSN (Print)0277-786X

Conference

ConferenceMetrology, Inspection, and Process Control for Microlithography XXII
Country/TerritoryUnited States
CitySan Jose, CA
Period2/25/082/28/08

Keywords

  • Electrostatic deposition
  • NIST-traceable size
  • Particle standard
  • Surface inspection tools

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