DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs

S. W. Bedell; A. Majumdar; K. A. Jenkins; J. A. Ott; J. Arnold; K. Fogel; S. J. Koester; D. K. Sadana

doi:10.1109/DRC.2008.4800729

DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs

S. W. Bedell, A. Majumdar, K. A. Jenkins, J. A. Ott, J. Arnold, K. Fogel, S. J. Koester, D. K. Sadana

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	45-46
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800729
State	Published - Dec 1 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: Jun 23 2008 → Jun 25 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	6/23/08 → 6/25/08

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Bedell, S. W., Majumdar, A., Jenkins, K. A., Ott, J. A., Arnold, J., Fogel, K., Koester, S. J., & Sadana, D. K. (2008). DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 45-46). Article 4800729 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800729

Bedell, SW, Majumdar, A, Jenkins, KA, Ott, JA, Arnold, J, Fogel, K, Koester, SJ & Sadana, DK 2008, DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs. in 66th DRC Device Research Conference Digest, DRC 2008., 4800729, Device Research Conference - Conference Digest, DRC, pp. 45-46, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800729

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title = "DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs",

author = "Bedell, {S. W.} and A. Majumdar and Jenkins, {K. A.} and Ott, {J. A.} and J. Arnold and K. Fogel and Koester, {S. J.} and Sadana, {D. K.}",

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doi = "10.1109/DRC.2008.4800729",

language = "English (US)",

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T1 - DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs

AU - Bedell, S. W.

AU - Majumdar, A.

AU - Jenkins, K. A.

AU - Ott, J. A.

AU - Arnold, J.

AU - Fogel, K.

AU - Koester, S. J.

AU - Sadana, D. K.

PY - 2008/12/1

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DO - 10.1109/DRC.2008.4800729

M3 - Conference contribution

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SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 45

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BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -

DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs

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