Dynamic Memory Cells Using MoS₂ Field-Effect Transistors Demonstrating Femtoampere Leakage Currents

Engineering & Materials Science

• Leakage currents 81%
• Field effect transistors 81%
• Transistors 64%
• Data storage equipment 46%
• Transition metals 44%
• Networks (circuits) 25%
• Monolayers 19%
• Molybdenum 17%
• Energy gap 17%
• Semiconductor materials 13%
• Scalability 12%
• Electric power utilization 11%
• Geometry 9%

Chemical Compounds

• Leakage Current 100%
• Field Effect 75%
• Transition Element 36%
• Effective Mass 35%
• Molybdenum Disulfide 30%
• Application 23%
• Retention Time 23%
• Semiconductor 19%
• Band Gap 19%
• Monolayer 19%

Physics & Astronomy

• leakage 62%
• transistors 60%
• field effect transistors 59%
• cells 40%
• transition metals 25%
• molybdenum disulfides 19%
• logic 14%
• direct current 11%
• broadband 10%
• geometry 8%
• predictions 8%
• performance 6%