Effect of growth temperature on the key properties of aluminum-doped zinc oxide thin films prepared by atomic layer deposition

Emine Güneri, Bethanie Stadler

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Aluminum-doped zinc oxide films were prepared by atomic layer deposition using diethylzinc, trimethylaluminum, and water. High-purity water was used with low vacuum. The effect of growth temperature on characteristics of the films was investigated. The crystallinity was improved as growth temperature was increased from 180 to 235 °C, with the grain sizes increasing from 32.830 to 47.020 nm. The films possessed high transparency with a 95% transmission window blue shifted with growth temperature. This shift was seen in the energy-band gaps which changed from 3.46 to 3.68 eV, leading to a decreased resistivity from 1.52 × 10-5 to 1.28 × 10-5 Ω cm.

Original languageEnglish (US)
Pages (from-to)1105-1110
Number of pages6
JournalMRS Communications
Volume9
Issue number3
DOIs
StatePublished - Sep 1 2019

Bibliographical note

Funding Information:
This work was supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant No. 1059B191200565-ID 893022. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-1542202.

Publisher Copyright:
© Materials Research Society 2019.

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