Effect of H 2 dilution on the surface composition of plasma-deposited silicon films from SiH 4

Denise C. Marra, Erik A. Edelberg, Ryan L. Naone, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The surface composition of silicon films deposited from SiH 4 , Ar, and H 2 plasmas was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy with emphasis on the effects of H 2 dilution. In the absence of H 2 , the surface is primarily covered with SiH 3 and SiH 2 . With heavy H 2 dilution, the surface is predominantly monohydride terminated with infrared absorption frequencies consistent with the presence of SiH on Si (100) and Si (111) surfaces.

Original languageEnglish (US)
Pages (from-to)148-151
Number of pages4
JournalApplied Surface Science
Volume133
Issue number1-2
DOIs
StatePublished - May 1998

Bibliographical note

Funding Information:
This material is based upon work supported under a National Science Foundation Graduate Fellowship. The authors also acknowledge funding by the National Science Foundation Young Investigator Award (ECS 9457758). We thank Professor D. Maroudas and Mr. S. Ramalingam for insightful discussions.

Keywords

  • Amorphous silicon
  • Attenuated total reflection Fourier transform infrared spectroscopy
  • Nanocrystalline silicon
  • Plasma deposition

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