Effect of H                         2                          dilution on the surface composition of plasma-deposited silicon films from SiH                         4

Denise C. Marra; Erik A. Edelberg; Ryan L. Naone; Eray S. Aydil

doi:10.1016/S0169-4332(98)00214-1

Effect of H ₂ dilution on the surface composition of plasma-deposited silicon films from SiH ₄

Denise C. Marra, Erik A. Edelberg, Ryan L. Naone, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The surface composition of silicon films deposited from SiH ₄ , Ar, and H ₂ plasmas was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy with emphasis on the effects of H ₂ dilution. In the absence of H ₂ , the surface is primarily covered with SiH ₃ and SiH ₂ . With heavy H ₂ dilution, the surface is predominantly monohydride terminated with infrared absorption frequencies consistent with the presence of SiH on Si (100) and Si (111) surfaces.

Original language	English (US)
Pages (from-to)	148-151
Number of pages	4
Journal	Applied Surface Science
Volume	133
Issue number	1-2
DOIs	https://doi.org/10.1016/S0169-4332(98)00214-1
State	Published - May 1998

Bibliographical note

Funding Information:
This material is based upon work supported under a National Science Foundation Graduate Fellowship. The authors also acknowledge funding by the National Science Foundation Young Investigator Award (ECS 9457758). We thank Professor D. Maroudas and Mr. S. Ramalingam for insightful discussions.

Keywords

Amorphous silicon
Attenuated total reflection Fourier transform infrared spectroscopy
Nanocrystalline silicon
Plasma deposition

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Marra, D. C., Edelberg, E. A., Naone, R. L., & Aydil, E. S. (1998). Effect of H ₂ dilution on the surface composition of plasma-deposited silicon films from SiH ₄ Applied Surface Science, 133(1-2), 148-151. https://doi.org/10.1016/S0169-4332(98)00214-1

Effect of H ₂ dilution on the surface composition of plasma-deposited silicon films from SiH ₄ . / Marra, Denise C.; Edelberg, Erik A.; Naone, Ryan L. et al.
In: Applied Surface Science, Vol. 133, No. 1-2, 05.1998, p. 148-151.

Research output: Contribution to journal › Article › peer-review

Marra, DC, Edelberg, EA, Naone, RL & Aydil, ES 1998, ' Effect of H ₂ dilution on the surface composition of plasma-deposited silicon films from SiH ₄ ', Applied Surface Science, vol. 133, no. 1-2, pp. 148-151. https://doi.org/10.1016/S0169-4332(98)00214-1

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abstract = " The surface composition of silicon films deposited from SiH 4 , Ar, and H 2 plasmas was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy with emphasis on the effects of H 2 dilution. In the absence of H 2 , the surface is primarily covered with SiH 3 and SiH 2 . With heavy H 2 dilution, the surface is predominantly monohydride terminated with infrared absorption frequencies consistent with the presence of SiH on Si (100) and Si (111) surfaces.",

keywords = "Amorphous silicon, Attenuated total reflection Fourier transform infrared spectroscopy, Nanocrystalline silicon, Plasma deposition",

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note = "Funding Information: This material is based upon work supported under a National Science Foundation Graduate Fellowship. The authors also acknowledge funding by the National Science Foundation Young Investigator Award (ECS 9457758). We thank Professor D. Maroudas and Mr. S. Ramalingam for insightful discussions. ",

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