Effect of Wet etching on the magnetic properties of n-type GaMnN layers

Y. Liu, M. I. Nathan, P. P. Ruden, J. E. Van Nostrand, B. Claflin, J. D. Albrecht

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a study of the effect of wet etching on the magnetic properties of two different GaMnN epi-layers. In both samples, X-ray diffraction scans revealed peaks attributed to secondary phases prior to etching and the disappearance of these peaks after etching. Temperature dependence of magnetization revealed a magnetic transition at approximately 170K in both samples. Both exhibited magnetic hysteresis, one up to 300K and the other only below 170K. After etching, the first sample still exhibited hysteresis up to 300K, and the other exhibited no hysteresis. Neither sample showed the magnetic transition at 170K after etching. A secondary phase with a Curie temperature near 170K may be responsible for the observed effects.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages359-360
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

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