We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.
|Original language||English (US)|
|Journal||Journal of Physics: Conference Series|
|State||Published - 2013|
|Event||20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012 - Chamonix Mont Blanc, France|
Duration: Jul 22 2012 → Jul 27 2012