Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN

Sung Hyun Park; Jinsub Park; Daeyoung Moon; Namhyuk Kim; Duck Jae You; Junghwan Kim; Jinki Kang; Sang Moon Lee; Ju Sung Kim; Moon Seung Yang; Taek Kim; Euijoon Yoon

doi:10.3938/jkps.58.906

Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN

Sung Hyun Park, Jinsub Park, Daeyoung Moon, Namhyuk Kim, Duck Jae You, Junghwan Kim, Jinki Kang, Sang Moon Lee, Ju Sung Kim, Moon Seung Yang, Taek Kim, Euijoon Yoon

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0° to -0.65° toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0° to -0.37° were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37° improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.

Original language	English (US)
Pages (from-to)	906-910
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	58
Issue number	41
DOIs	https://doi.org/10.3938/jkps.58.906
State	Published - Apr 4 2011
Externally published	Yes

Keywords

MOCVD
Nonpolar
Tilt angle
a-plane GaN
r-plane sapphire

Access

10.3938/jkps.58.906

OpenUrl availability

Full text

Cite this

@article{7ed57770639344ef984c0dc2226d4ca0,

title = "Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN",

abstract = "We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0° to -0.65° toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0° to -0.37° were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37° improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.",

keywords = "MOCVD, Nonpolar, Tilt angle, a-plane GaN, r-plane sapphire",

author = "Park, {Sung Hyun} and Jinsub Park and Daeyoung Moon and Namhyuk Kim and You, {Duck Jae} and Junghwan Kim and Jinki Kang and Lee, {Sang Moon} and Kim, {Ju Sung} and Yang, {Moon Seung} and Taek Kim and Euijoon Yoon",

year = "2011",

month = apr,

day = "4",

doi = "10.3938/jkps.58.906",

language = "English (US)",

volume = "58",

pages = "906--910",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "41",

}

TY - JOUR

T1 - Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN

AU - Park, Sung Hyun

AU - Park, Jinsub

AU - Moon, Daeyoung

AU - Kim, Namhyuk

AU - You, Duck Jae

AU - Kim, Junghwan

AU - Kang, Jinki

AU - Lee, Sang Moon

AU - Kim, Ju Sung

AU - Yang, Moon Seung

AU - Kim, Taek

AU - Yoon, Euijoon

PY - 2011/4/4

Y1 - 2011/4/4

N2 - We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0° to -0.65° toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0° to -0.37° were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37° improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.

AB - We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0° to -0.65° toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0° to -0.37° were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37° improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.

KW - MOCVD

KW - Nonpolar

KW - Tilt angle

KW - a-plane GaN

KW - r-plane sapphire

UR - http://www.scopus.com/inward/record.url?scp=79955072909&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955072909&partnerID=8YFLogxK

U2 - 10.3938/jkps.58.906

DO - 10.3938/jkps.58.906

M3 - Article

AN - SCOPUS:79955072909

SN - 0374-4884

VL - 58

SP - 906

EP - 910

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 41

ER -

Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN

Abstract

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this